H5TQ1G63EFR-xxJ datasheet, sdram equivalent, SK Hynix

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Features and benefits

and Ordering Information FEATURES
* DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V
* DQ Ground supply : VSSQ = Ground
* Fully differential clock inputs .

Application

which requires large memory density and high bandwidth. SK hynix Inc. 1Gb DDR3 SDRAMs offer fully synchronous operations.

Description

The H5TQ1G6(8)3EFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix Inc. 1Gb DDR3 SDRAMs offer fully.

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