¾ Advanced trench process technology ¾ High Density Cell Design For Ultra Low On-Resistance ¾ High Power and Current handing capability ¾ Ideal for Li ion battery pack ap.

Internal Schematic Diagram D ra in 1 D ra in 2 G at e1 G at e2 S ou rc e 1 S ou rc e 2 N-Channel MOSFET Maximum.

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