█ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is prod.

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low volt.

S80N08R

S80N08RN

S80N08RP

S80N10R

S80N10RN

S80N10RP

S80N10S

S80N18R

S80N18S

S80N22T

S80

S80016

S80016LK7

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