S60N10M mosfet equivalent, n-channel power mosfet.
* 60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V
* High Ruggedness
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
General Description
This .
This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low volt.
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