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SHINDENGEN

P180FP4SNK Datasheet Preview

P180FP4SNK Datasheet

Power MOSFET

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Nch
P180FP4SNK
Power MOSFET
OUTLINE
Package FP
Unit : mm
40V 180A
10.2
S0000
180FP4
SNK
4.6
Feature
2.54
①② ③
(②④)
2.34
(①)
(③)
RATINGS
Absolute Maximum Ratings
For details of the outline dimensions, refer to our web site. As for the
marking, refer to the specification “Marking, Terminal Connection”.
Item Symbol
Conditions
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current DC
Continuous Drain Current Peak)
Total Power Dissipation
Single Avalanche Current
Single Avalanche Energy
Tstg
Tch
VDSS
VGSS
ID
IDP
PT
IAS
EAS
Pulse width 10μs, duty = 1/100
Starting Tch=25 Tch 150
Starting Tch=25 Tch 150
Electrical Characteristics
Item Symbol
Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Transconductance
Static Drain-Source On-state Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
gfs
R(DS)ON
VTH
VSD
θjc
Qg
Qgs
Qgd
Ciss
Crss
Coss
td (on)
tr
td (off)
tf
trr
Qrr
ID = 1mA, VGS = 0V
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
ID = 90A, VDS = 10V
ID = 90A, VGS = 10V
ID = 1mA, VDS = 10V
IS = 180A, VGS = 0V
Junction to case
VDD = 32V, VGS = 10V, ID = 180A
VDS = 25V, VGS = 0V, f = 1MH
ID = 90A, RL = 0.22Ω, VDD = 20V, Rg=0Ω
VGS(+) = 10V, VGS(−) = 0V
IF=180A, VGS=0V
di/dt=100A/μs
Ratings
Unit
Ratings
Unit
www.shindengen.co.jp/product/semi/




SHINDENGEN

P180FP4SNK Datasheet Preview

P180FP4SNK Datasheet

Power MOSFET

No Preview Available !

CHARACTERISTIC DIAGRAMS
P180FP4SNK
www.shindengen.co.jp/product/semi/
50Hz sine wave is used for measurements.


Part Number P180FP4SNK
Description Power MOSFET
Maker SHINDENGEN
Total Page 4 Pages
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