MMBTSA1298W
PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain.
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Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS
Value 35 30 5 800 160 200 150
- 55 to + 150
Unit V V V m A m A m W
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 1 V, -IC = 100 m A at -VCE = 1 V, -IC = 800 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Breakdown Voltage at -IC = 10 m A Emitter Base Breakdown Voltage at -IE = 1 m A Collector Saturation Voltage at -IC = 500 m A, -IB = 20 m A Base Emitter Voltage at -VCE = 1 V, -IC = 10 m A Transition Frequency at -VCE = 5 V, -IC = 10 m A...
