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1SS321 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Features

  • Low forward voltage.
  • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteris.

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Datasheet Details

Part number 1SS321
Manufacturer SEMTECH ELECTRONICS
File Size 184.50 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1SS321 Datasheet

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