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SFTN0780
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed 1) Power Dissipation Operating Junction Temperature Storage Temperature Range
1) Pulse width limited by maximum junction temperature
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol VDS VGS ID IDM Ptot Tj Tstg
Symbol RθJC RθJA
Value 800 ± 30
7 26.4 48 150 - 55 to + 150
Max. 2.6 62.5
Unit V V A A W ℃ ℃
Unit ℃/W ℃/W
SEMTECH ELECTRONICS LTD.
®
Dated: 01/04/2016 Rev: 01
SFTN0780
Characteristics at TC = 25℃ unless otherwise specified
Parameter
Symbol Min.
SFTN0780 Datasheet
