MMBT9014
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As plementary types the PNP transistor MMBT9015 is remended.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC Ptot Tj TS
SOT-23 Plastic Package
Value 50 45 5 100 200 150
- 55 to + 150
Unit V V V m A m W OC OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at VCE = 5 V, IC = 1 m A
MMBT9014B MMBT9014C MMBT9014D
Collector Cutoff Current at VCB = 50 V
Emitter Cutoff Current at VEB = 5 V
Collector Base Breakdown Voltage at IC = 100 µA
Collector Emitter Breakdown Voltage at IC = 1 m A
Emitter Base Breakdown Voltage at IE = 100 µA
Collector Emitter Saturation Voltage at IC = 100 m A, IB = 5 m A
Base Emitter Saturation Voltage at IC = 100 m A, IB = 5 m A
Gain Bandwidth Product at VCE = 5 V, IC = 10 m A
Output...
