MMBT9012
PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications.
As plementary types the NPN transistors MMBT9013 is remended.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
SOT-23 Plastic Package
Symbol -VCBO -VCEO -VEBO
-IC Ptot Tj Tstg
Value 40 30 5 500 200 150
- 55 to + 150
Unit V V V m A m W OC OC
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 1 V, -IC = 50 m A
Current Gain Group at -VCE = 1 V, -IC = 500 m A Collector Base Cutoff Current at -VCB = 35 V
Emitter Base Cutoff Current at -VEB = 5 V
Collector Base Breakdown Voltage at -IC = 100 μA
Collector Emitter Breakdown Voltage at -IC = 1 m A
Emitter Base Breakdown Voltage at -IE = 100 μA
Collector Emitter Saturation Voltage at -IC = 500 m A, -IB = 50 m A
Base Emitter Saturation Voltage at -IC = 500 m A, -IB = 50 m A
Base...
