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BZT55C62 - SILICON EPITAXIAL PLANAR ZENER DIODES

Download the BZT55C62 datasheet PDF. This datasheet also covers the BZT55C2V4 variant, as both devices belong to the same silicon epitaxial planar zener diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • Very sharp reverse characteristic.
  • Low reverse current level.
  • Available with tighter tolerances.
  • Very high stability.
  • Low noise LS-34.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BZT55C2V4-SEMTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZT55C62
Manufacturer SEMTECH
File Size 308.59 KB
Description SILICON EPITAXIAL PLANAR ZENER DIODES
Datasheet download datasheet BZT55C62 Datasheet

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Other Datasheets by SEMTECH

Part Number Description
BZT55C68 SILICON EPITAXIAL PLANAR ZENER DIODES
BZT55C6V2 SILICON EPITAXIAL PLANAR ZENER DIODES
BZT55C6V8 SILICON EPITAXIAL PLANAR ZENER DIODES
BZT55C10 SILICON EPITAXIAL PLANAR ZENER DIODES
BZT55C11 SILICON EPITAXIAL PLANAR ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA Symbol Ptot IZ Tj TS Value 500 Ptot / VZ 175 - 65 to + 175 Unit mW mA OC OC Symbol RthJA VF Max. 500 1.5 Unit K/W V SEMTECH ELECTRONICS LTD.
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