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BC212 Datasheet

PNP Silicon Epitaxial Planar Transistor

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BC212
PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 µA
at -VCE = 5 V, -IC = 2 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
60
50
5
300
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Symbol
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
CCBO
Min.
40
60
-
-
60
50
5
-
-
0.6
200
-
Max.
-
300
15
15
-
-
-
0.6
1.1
0.72
-
10
Unit
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007



Part Number BC212
Description PNP Silicon Epitaxial Planar Transistor
Maker SEMTECH
Total Page 1 Pages
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