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2SA1666U
PNP Silicon Epitaxial Planar Transistor
for high current application
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current
Total Power Dissipation
Junction Temperature Storage Temperature Range
1) When mounted on a 250 mm2 x 0.8 t ceramic substrate.
Symbol
Value
Unit
-VCBO
50
V
-VCEO
50
V
-VEBO
5
V
-IC
2
A
-IB
0.4
A
Ptot
0.5 1 1)
W
Tj
150
℃
Tstg
- 55 to + 150
℃
Characteristics at Ta = 25℃
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 500 mA at -VCE = 2 V, -IC = 1.
2SA1666U Datasheet
