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2SA1012
PNP Silicon Epitaxial Planar Transistor
for high current switching applications.
The transistor is subdivided into two group, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb = 25 OC Parameter
DC Current Gain at -VCE = 1 V, -IC = 1 A
at -VCE = 1 V, -IC = 3 A Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Cutoff Current
at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 3 A, -IB = 0.15 A Base Emitter Saturation Voltage at -IC = 3 A, -IB = 0.
2SA1012 Datasheet
