Datasheet Summary
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application
Features
- Low forward voltage: VF = 0.23V (typ.) @IF=5mA
PINNING
PIN 1 2
DESCRIPTION Cathode...
- Part: 1SS389
- Description: SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
- Manufacturer: SEMTECH
- Size: 240.09 KB
Other 1SS389 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
1SS389 | Silicon Diode |
LGE |
1SS389 | Schottky Barrier Diode |
Micro Commercial Components |
1SS389 | Switching Diode |
Kexin Semiconductor |
1SS389 | HIGH SPEED SWITCHING DIODE |
JCST |
1SS389 | SCHOTTKY BARRIER DIODE |