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1SS352 - Silicon Epitaxial Planar Switching Diode

General Description

Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Rectified Forward Current HMaximum (Peak) Forward Current Surge Forward Current (10 ms) CPower Dissipation J

Key Features

  • Low forward voltage.
  • Fast Reverse Recovery Time.
  • Small Total Capacitance.

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Datasheet Details

Part number 1SS352
Manufacturer SEMTECH
File Size 471.79 KB
Description Silicon Epitaxial Planar Switching Diode
Datasheet download datasheet 1SS352 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS352 Silicon Epitaxial Planar Switching Diode Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance Application • Ultra high speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Rectified Forward Current HMaximum (Peak) Forward Current Surge Forward Current (10 ms) CPower Dissipation Junction Temperature EStorage Temperature Range TCharacteristics at Ta = 25 OC Parameter MForward Voltage at IF = 100 mA EReverse Current at VR = 30 V Sat VR= 80 V Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg Value 85 80 100 200 1 200 150 - 55 to + 150 Unit V V mA mA A mW OC OC Symbol VF IR M