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1N6642 - Axial Leaded Hermetically Sealed Switching Diodes

Download the 1N6642 datasheet PDF. This datasheet also covers the 1N6638 variant, as both devices belong to the same axial leaded hermetically sealed switching diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • Quick reference data.
  • Low reverse leakage current.
  • Hermetically sealed in fused metal oxide.
  • Good thermal shock resistance.
  • Low forward voltage drop These products are qualified to MIL-PRF-19500/578. They can be supplied fully released as JAN, JANTX, JANTXV and JANS. VBR = 75 - 150V trr = 4.5 - 6.0ns Io = 300mA, TA = 75oC VF = 1.1 -1.2V Absolute Maximum Rating Electrical specifications @ TA = 25oC unless otherwise specified. Parameter Symbol 1N6638 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N6638-SEMTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N6642
Manufacturer SEMTECH
File Size 74.87 KB
Description Axial Leaded Hermetically Sealed Switching Diodes
Datasheet download datasheet 1N6642 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N6638, 1N6642, 1N6643 Axial Leaded Hermetically Sealed Switching Diodes HIGH-RELIABILITY PRODUCTS Features Quick reference data • Low reverse leakage current • Hermetically sealed in fused metal oxide • Good thermal shock resistance • Low forward voltage drop These products are qualified to MIL-PRF-19500/578. They can be supplied fully released as JAN, JANTX, JANTXV and JANS. VBR = 75 - 150V trr = 4.5 - 6.0ns Io = 300mA, TA = 75oC VF = 1.1 -1.2V Absolute Maximum Rating Electrical specifications @ TA = 25oC unless otherwise specified. Parameter Symbol 1N6638 1N6642 1N6643 Breakdown Voltage Working Reverse Voltage Operating Current @75 °C , lead length 0.375” Non-Repetitive Surge Current (tp = 8.3ms, @25 °C) VBR VRWM IO IFSM 150 125 300 2.5 100 75 300 2.5 75 50 300 2.
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