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PP3500SC - N-CHANNEL POWER MOSFET

General Description

This MOSFET is produced with advanced VDMOS technology of SEMIWILL.

This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics .

Key Features

  • High ruggedness.
  • RDS(ON)(Max. 2.5Ω)@VGS=10V.
  • Gate Charge (Typ.16nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested PP0640SA - PSFPU345N0600SC D G S.

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Datasheet Details

Part number PP3500SC
Manufacturer SEMIWILL
File Size 1.28 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet PP3500SC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. FEATURES • High ruggedness • RDS(ON)(Max. 2.5Ω)@VGS=10V • Gate Charge (Typ.16nC) • Improved dv/dt Capability • 100% Avalanche Tested PP0640SA - PSFPU345N0600SC D G S SCHEMATIC SYMBOL GD S TO-251/IPAK PACKAGE 600 4.0 2.5 16 ±30 240 10 4.5 80 0.78 300 *When mounted on the minimum pad size recommended(PCB Mount) 05R0E8V1.1.2R0151B2/11 * Page 11 1.56 50 110 www.pwrwotwe.