CR03
Sensitive Gate Silicon Controlled Rectifier
DESCRIPTION
PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
FEATURES
> High voltage capability
> Planar passivated for voltage ruggedness and reliability
> Sensitive gate
APPLICATIONS
> Ignition circuits
> Lighting ballasts
> Protection circuits
> Switched Mode Power Supplies
TO-92 PACKAGE
AK
G
SCHEMATIC SYMBOL
ABSOLUTE MAXIMUM RATINGS
Parameter
RepeƟƟve peak off-state voltage
RepeƟƟve peak reverse voltage
RMS on-state current
Non repeƟƟve surge peak on-state current
I2t value for fusing
CriƟcal rate of rise of on-state current
Forward Peak gate current
Average gate power dissipaƟon
Peak gate power
Storage juncƟon temperature range
OperaƟng juncƟon temperature range
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IFGM
PG(AV)
PGM
Tstg
TJ
CondiƟons
Tj=25°C
Tj=25°C
TC=65°C
1/2Cycle,60Hz,SineWave Non-RepeƟƟve
t=8.3ms
Tj=110°C
tp=20μs, Tj=110°C
Value
800
800
1.2
10
0.72
50
1
0.1
0.5
-40 to 125
-40 to 125
Units
V
V
A
A
A2s
A/us
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified)
Parameter
Symbol
Test CondiƟons
Gate trigger current
Gate trigger voltage
Gate no-trigger Voltage
Holding current
Rate of rise of off-state voltage
IGT
VGT
VGD
IH
dV/dt
VAK=6V,RL=100ohm
VD=7V,RL=100ohm
VAK=12V,RL=100ohm,TC=125°C
VAK=12V
VD=Rated VDRM Tj=125°C RGK=1KΩ
Value
Units
Min. Typ. Max.
- - 200 uA
- - 0.8 V
0.2 - - V
- 2 5 mA
20 35
- V/us
REV.150306B1
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