* Low RDS(on) (0.030Ω )@VGS=4.5V Low RDS(on) (0.043Ω )@VGS=2.5V Gate Charge (Typical 14nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C) Avail.

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalan.

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