1KSMBJ20CA Datasheet | SEMITECH

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 1KSMBJ Series 1000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 1000W @10 x 1000 us Pulse l Low profile package. l Excellent clamping capability. l Glass passivated junction. l Fast response time: typically less than 1ps from 0 Volts to BV min l Typical IR less than 1u A when VBR min above 12V. l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact) l ESD protection of data lines in accordance with IEC 61000-4-2 l EFT protection of data lines in accordance with IEC 61000-4-4 l Halogen free and Ro HS pliant l Lead-free finish Bi-directional Cathode Anode Mechanical Characteristics Uni-directional CASE: SMB (DO-214AA) Molded Plastic over glass passivated junction. Mounting Position: Any Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device. Terminal: Solder plated Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted) Parameter Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1) Power Dissipation on Infinite Heat Sink at TL=50°C Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3) Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2. 3) Operating Junction Temperature Range Storage Temperature Range Symbol PPPM PD IPPM IFSM TJ TSTG Value Min 1000 5 See Table 1 120 -55 to 150 -55 to 150 Units W W A A °C °C Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2. 2. Mounted on 5.0x5.0mm2 (0.03mm thick) Copper Pads to each terminal. 3. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only. Rev. 2.0, 10-Nov.-16 .SEMITECH.CN 1KSMBJ Series Electrical Specification @ Tamb 25°C Type Number Marking Reverse Stand-Off Voltage...