SW1N60E mosfet equivalent, n-channel enhanced mode to-92/to-251 mosfet.
TO-92
TO-251
* High ruggedness
* Low RDS(ON) (Typ7.3Ω)@VGS=10V
* Low Gate Charge (Typ3.7nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
Image gallery
TAGS
Download (Size : 684.67KB)