* High ruggedness
* Low RDS(ON) (Typ 2.8mΩ)@VGS=10V
* Low Gate Charge (Typ 178nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Applicatio.

nchronous Rectification, Li Battery Protect Board, Inverter N-channel Enhanced mode TO-220 MOSFET TO-220 12 3 1. Gate .

3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche char.

SW180N06A

SW18CXC950

SW18N65D

SW1

SW10-0312

SW10-0313

SW100N03

SW100N10

SW100N10A

SW100N10B

SW104

SW105D05EHISMF

SW105D12EHISMF

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