* High ruggedness
* RDS(ON) (Max 0.32Ω)@VGS=10V
* Gate Charge (Typ 66 nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-220F 123 1. Gate 2. .

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.

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