SW13N50B mosfet equivalent, mosfet.
* High ruggedness
* RDS(ON) (Max 0.52Ω)@VGS=10V
* Gate Charge (Typical 29nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220F
1 2 3
1. Gat.
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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