HP50N06 - 60V N-Channel MOSFET

SEMIHOW

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.023 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HP50N06 60v n-channel mosfet by SEMIHOW - Datasheet Preview

Datasheet Details

Part number	HP50N06
Manufacturer	SEMIHOW
File Size	944.83 KB
Description	60V N-Channel MOSFET
Datasheet	HP50N06 Datasheet

Full PDF Text Transcription for HP50N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HP50N06. For precise diagrams, and layout, please refer to the original PDF.

HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Ga...

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ginative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.023 Ω (Typ.) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3.

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