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N-Channel MOS FET
FKP330C
July. 2007
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy guarantee
■Package---FM100 (TO-3P Full Mold)
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
Designs
New G (1)
D (2)
for S (3) ded ■Absolute maximum ratings
men Characteristic
Drain to Source Voltage
om Gate to Source Voltage ec Continuous Drain Current R Pulsed Drain Current tMaximum Power Dissipation NoSingle Pulse Avalanche Energy
Symbol VDSS VGSS
ID ID(pulse) １)
PD EAS ２)
Rating 330 ±30 ±30A
±120A 85 (Tc=25°C)
500
(Ta=25°C） Unit V V A A W mJ
Avalanche Current
IAS
30
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
－55~150
°C
１) PW≤100μs，duty cycle≤１％ ２) VDD=20V,L=1mH，ILp=30A,unclamped,RG=50Ω,See Fig.1
.
Sanken Electric Co.
FKP330C Datasheet
