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EKI10300 - N Channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 34 A.
  • RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A).
  • Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-220 (4) D (1) (2) (3) GDS.

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Datasheet Details

Part number EKI10300
Manufacturer Sanken
File Size 602.16 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet EKI10300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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100 V, 34 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI10300 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 34 A  RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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