STB8200 - SCHOTTKY RECTIFIER

SANGDEST MICROELECTRONICS

Datasheet Details

150 °C TJ operation.
Center tap configuration.
Ultralow forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request ST8200 STB820.

📁 Related Datasheet

STB820S - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STB80B170 - Thyristor Surge Suppresser (SEMIWILL)
STB80L60 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop)
STB80N20M5 - Power MOSFET (ST Microelectronics)
STB80N4F6AG - N-channel Power MOSFET (STMicroelectronics)
STB80NE03L-06 - N-CHANNEL POWER MOSFET (ST Microelectronics)
STB80NE06-10 - N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET (ST Microelectronics)
STB80NF03L-04 - N-CHANNEL POWER MOSFET (ST Microelectronics)

📌 All Tags

SANGDEST MICROELECTRONICS STB8200-like datasheet

STB8200 Stock/Price