RU80100S mosfet equivalent, n-channel advanced power mosfet.
* 80V/100A, RDS (ON) =5.5mΩ (Typ.) @ VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100.
* High Current Switching Applications
* Inverter Systems
RU80100S
N-Channel Advanced Power MOSFET Pin Descripti.
D
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou.
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