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RU6099S - N-Channel Advanced Power MOSFET

Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

  • 60V/120A, RDS (ON) =6m(Typ. ) @VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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Datasheet Details

Part number RU6099S
Manufacturer Ruichips
File Size 305.47 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6099S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 60V/120A, RDS (ON) =6m(Typ.
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