RU5H18Q mosfet equivalent, n-channel advanced power mosfet.
*500V/18A, RDS (ON) =0.27Ω (Typ.) @ VGS=10V
* Gate charge minimized
* Low Crss( Typ. 26pF)
* Extremely high dv/dt capability
* 100% avalanche tested <.
* High efficiency switch mode power supplies
* Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Par.
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