RU40E80L mosfet equivalent, n-channel advanced power mosfet.
* 40V/80A, RDS (ON) =4.5mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V
* Low RDS (ON)
* Super High Dense Cell Design
* ESD protected
* 100% avalanche.
* Switching Applications
Pin Description
D
G S
TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratin.
D
G S
TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou.
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