RU30S4H mosfet equivalent, p-channel advanced power mosfet.
* -30V/-4.8A, RDS (ON) =50mΩ (Typ.) @ VGS=-10V RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* Lead Free and Gree.
* Power Management.
Absolute Maximum Ratings
Dual P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unl.
SOP-8
Applications
* Power Management.
Absolute Maximum Ratings
Dual P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
.
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