RU30E60M2 datasheet, mosfet equivalent, Ruichips

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Features and benefits

* 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Ulta Low On-Resistance
* ESD Protected(Rating 4KV HBM.

Application

* Switching Application Systems Pin Description D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings S.

Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra.

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