RU1Z200Q mosfet equivalent, n-channel advanced power mosfet.
* 150V/200A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% .
* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching
* Power Supply
Pin Descrip.
G DS TO247
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forwa.
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