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Roithner Laser

H2A1-H1020 Datasheet Preview

H2A1-H1020 Datasheet

IR High Power single chip LED

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H2A1-H1020
IR High Power single chip LED
H2A1-H1020 is a GaAlAs based, high power 1020 nm single chip LED in standard hexagonal Aluminum package for
general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are
also suitable for M3 or M4 mounting screws. Large electrical interconnection pads on the PCB allow for convenient
installation.
Specifications
Structure: GaAlAs
Peak Wavelength: 1020 nm
Optical Output Power: typ. 40 mW
Life Time: > 10.000 hours
Housing: standard emitter package
Absolute Maximum Ratings (Ta=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Symbol
PD
IF
IFP
UR
Topr
Tstg
Tsol
Electro-Optical Characteristics (Ta=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Symbol
IF
φ
PO
λP
UF
Δλ
Condition
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Min.
-
-
-
Device Materials
foundation
Lens
Electrodes
PCB
Item
Plastic
Acryl
AgCu
Al
Material
Value
1000
500
1000
-5
-30 … +70
-30 … +85
330
Typ.
350
± 75
40
1020
1.3
35
Max.
-
-
Unit
mW
mA
mA
V
°C
°C
°C
Unit
mA
deg.
mW
nm
V
nm
13.08.2012
H2A1-H1020
1/4




Roithner Laser

H2A1-H1020 Datasheet Preview

H2A1-H1020 Datasheet

IR High Power single chip LED

No Preview Available !

Typical Performance Characteristics
Normalized Output Power vs. Wavelength:
Outline Dimensions
Emitter:
13.08.2012
H2A1-H1020
2/4


Part Number H2A1-H1020
Description IR High Power single chip LED
Maker Roithner Laser
Total Page 4 Pages
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