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RLT850M-1WG50
TECHNICAL DATA
Infrared Laser Diode
Specifications
• • • • • Structure: Peak Wavelength: Optical Output Power: Package: Monitor PD:
AlGaAs/InGaAs
AlGaAs/InGaAs 852 nm 1 W, cw 9 mm, flat window build-in n-type
Electrical Connection
Pin Configuration
n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode (case) PD Anode
Bottom View
Electro-Optical Characteristics
Item Optical Specifications Central Wavelength Spectral Width (FWHM) Optical Output Power Beam Divergence Emitting Aperture Mode Structure Electrical Specifications Forward Current Threshold Current Forward Voltage Slope Efficiency Monitor Current Absolute Maximum Ratings Lifetime Operating Case Temperature Storage Temperature Soldering Temperature *
* must be completed within 3 seconds
specified at 25°C Symbo
RLT850M-1WG50 Datasheet
