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RLT1550-100G
TECHNICAL DATA
Infrared Laser Diode
Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm, multi mode Max. optical power: 100 mW Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode
Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 100 mW Operation Voltage Vop Po = 100 mW Lasing Wavelength λp Po = 100 mW Spectra halfwidth ∆λ Po = 100 mW (FWHM) Beam Divergence Θ// Po = 100 mW Beam Divergence Θ Po = 100 mW Emitting area Wxd
MIN 300 700 2.3 3 8 43 -
TYP 100 400 800 2.4 1580 4 10 45 100x 1
MAX 600 1000 2.5 1582 6 12 47 -
UNIT mW mA mA V nm nm ° ° µm x µm
04.08.
RLT1550-100G Datasheet
