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Rohm Semiconductor Electronic Components Datasheet

UML12N Datasheet

General purpose transistor

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Transistors
EML12 / UML12N
General purpose transistor
(isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications
DC / DC converter
Motor driver
zFeatures
1) Tr : Low VCE(sat)
Di : Low VF
2) Small package
zStructure
NPN Silicon epitaxial planar transistor
Schottky barrier diode
zExternal dimensions (Unit : mm)
EMT5
1.6
1.0
0.5 0.5
(5) (4)
0.5
(1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : L12
ROHM : EMT5
The following characteristics apply to both Di1 and Tr2.
zEquivalent circuit (EML12 / UML12N)
(5) (4)
Di1 Tr2
(1) (2) (3)
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EML12
EMT5
L12
T2R
8000
UML12N
UMT5
L12
TR
3000
UMT5
2.0
1.3
0.65 0.65
(5) (4)
0.9
0.7
1pin mark
(1) (2) (3)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : L12
ROHM : UMT5
EIAJ : SC-88A
Rev.A
1/4


Rohm Semiconductor Electronic Components Datasheet

UML12N Datasheet

General purpose transistor

No Preview Available !

Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol
Average revtified forward current
IO
Forward current surge peak (60Hz, 1) IFSM
Reverse voltage (DC)
VR
Junction temperature
Tj
Limits
200
1
30
125
Unit
mA
A
V
°C
Tr2
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
PD
Junction temperature
Tj
Each terminal mount on a recommended.
Limits
60
50
7
150
120
150
Unit
V
V
V
mA
mW
°C
Di1 / DTr2
Parameter
Symbol
Power dissipation
Pd
Storage temperature
Tstg
Each terminal mount on a recommended.
Limits
150
55 to +125
Unit
mW
°C
EML12 / UML12N
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Min. Typ. Max. Unit
Conditions
0.40 0.50 V IF=200mA
4.0 30 µA VR=10V
Tr2
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 7 − − V IE=50µA
Collector cutoff current
ICBO − − 0.1 µA VCB=60V
Emitter cutoff current
IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 180 390 VCE=6V, IC=1mA
Transition frequency
fT 180 MHz VCE=12V, IE=2mA, f=100MHz
Output capacitance
Cob 2 3.5 PF VCB=12V, IE=0A, f=1MHz
Rev.A
2/4


Part Number UML12N
Description General purpose transistor
Maker Rohm
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UML12N Datasheet PDF






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