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Rohm Semiconductor Electronic Components Datasheet

UMH3N Datasheet

Dual Digital Transistor

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Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
Transistors
EMH3 / UMH3N / IMH3A
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
zFeatures
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both DTr1 and DTr2.
zEquivalent circuit
EMH3 / UMH3N
(3) (2) (1)
R1
DTr2
DTr1
R1
(4) (5) (6)
R1=4.7k
IMH3A
(4) (5) (6)
R1
DTr2
DTr1
R1
(3) (2) (1)
R1=4.7k
zPackaging specifications
Type
Package
Code
Basic ordering
unit (pieces)
T2R
8000
EMH3
UMH3N
IMH3A
Taping
TN
3000
T110
3000
zExternal dimensions (Units : mm)
EMH3
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
ROHM : EMT6
Each lead has same dimensions
Abbreviated symbol : H3
UMH3N
1.25
2.1
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol : H3
IMH3A
1.6
2.8
ROHM : SMT6
EIAJ : SC-74
0.3to0.6
Each lead has same dimensions
Abbreviated symbol : H3
For the very latest product data and news visit angliac.com


Rohm Semiconductor Electronic Components Datasheet

UMH3N Datasheet

Dual Digital Transistor

No Preview Available !

Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector
power
dissipation
EMH3,UMH3N
IMH3A
Pc
Junction temperature
Tj
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
55~+150
Unit
V
V
V
mA
1
mW
2
°C
°C
EMH3 / UMH3N / IMH3A
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the device
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
Min.
50
50
5
100
3.29
Typ.
250
250
4.7
Max.
0.5
0.5
0.3
600
6.11
Unit
V
V
V
µA
µA
V
MHz
k
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.25mA
VCE=5V, IC=1mA
VCE=10mA, IE=5mA, f=100MHz
zElectrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
500m
lC/lB=20
200m
100m
50m
Ta=100°C
25°C
40°C
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
For the very latest product data and news visit angliac.com


Part Number UMH3N
Description Dual Digital Transistor
Maker Rohm
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UMH3N Datasheet PDF






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