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Rohm Semiconductor Electronic Components Datasheet

UMF5N Datasheet

Dual Transistor

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Transistors
UMF5N
Power management (dual transistors)
UMF5N
2SA2018 and DTC144EE are housed independently in a UMT package.
!Application
Power management circuit
!External dimensions (Units : mm)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
!Structure
Silicon epitaxial planar transistor
!Equivalent circuits
(3) (2) (1)
DTr2
R1
R2
Tr1
(4) (5)
R1=47k
R2=47k
(6)
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
!Packaging specifications
Type
UMF5N
Package
UMT6
Marking
F5
Code
TR
Basic ordering unit (pieces) 3000
1/4


Rohm Semiconductor Electronic Components Datasheet

UMF5N Datasheet

Dual Transistor

No Preview Available !

Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
15
12
6
500
1.0
150(TOTAL)
150
55~+150
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
V
mA
A 1
mW 2
°C
°C
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC
IO
PC
Tj
Tstg
Limits
50
10~+40
100
30
150(TOTAL)
150
55~+150
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA 1
mA
mW 2
°C
°C
UMF5N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
12
15
6
270
Typ.
100
260
6.5
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
Min.
3.0
68
32.9
0.8
Typ.
100
250
47
1.0
Max.
0.5
300
180
500
61.1
1.2
Unit
V
V
mV
µA
nA
MHz
k
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IE=−5mA, f=100MHz
2/4


Part Number UMF5N
Description Dual Transistor
Maker Rohm
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UMF5N Datasheet PDF






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