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Rohm Semiconductor Electronic Components Datasheet

UMF19N Datasheet

Power management

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Transistors
EMF19 / UMF19N
Power management (dual transistors)
EMF19 / UMF19N
2SC4617 and DTC123EE are housed independently in a EMT or UMT package.
zApplication
Power management circuit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zEquivalent circuits
(3) (2) (1)
DTr2
R1
R2
Tr1
(4) (5)
R1=2.2k
R2=2.2k
(6)
zExternal dimensions (Units : mm)
EMF19
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol :F19
UMF19N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : F19
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
EMF19
EMT6
F19
T2R
8000
UMF19N
UMT6
F19
TR
3000
Rev.A
1/4


Rohm Semiconductor Electronic Components Datasheet

UMF19N Datasheet

Power management

No Preview Available !

Transistors
EMF19 / UMF19N
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
7
Collector current
IC 150
Power dissipation
PC 150 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
120mW per element must not be exceeded.
55∼+150
Unit
V
V
V
mA
mW
˚C
˚C
DTr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits
50
10~+20
100
100
150(TOTAL)
150
55~+150
Unit
V
V
mA 1
mA
mW 2
°C
°C
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 7 − − V IE=50µA
Collector cutoff current
ICBO − − 0.1 µA VCB=60V
Emitter cutoff current
IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 180 390 VCE=6V, IC=1mA
Transition frequency
fT 180 MHz VCE=12V, IE= 2mA, f=100MHz
Output capacitance
Cob 2 3.5 PF VCB=12V, IE=0A, f=1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
3.0
20
1.54
0.8
Typ.
100
250
2.2
1.0
Max.
0.5
300
3.8
0.5
2.86
1.2
Unit
V
V
mV
mA
µA
MHz
k
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=20mA
VCE=10V, IE= −5mA, f=100MHz
Rev.A
2/4


Part Number UMF19N
Description Power management
Maker Rohm
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UMF19N Datasheet PDF






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