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TT8M3 - MOSFET

Features

  • 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package.
  • Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03.

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Datasheet Details

Part number TT8M3
Manufacturer ROHM
File Size 439.87 KB
Description MOSFET
Datasheet download datasheet TT8M3 Datasheet

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Full PDF Text Transcription

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1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03 Application Switching Packaging specifications Type TT8M3 Package Code Basic ordering unit (pieces) Taping TR 3000  Inner circuit (8) (7) (6) (5) Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch www.DataSheet.co.
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