TT8M2
2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET
TT8M2 z Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET z Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5) z Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package.
(1)
(2)
(3)
(4)
Abbreviated symbol : M02
Each lead has same dimensions z Application Switching z Inner circuit
(8) (7) (6) (5) z Packaging specifications
.Data Sheet.co.kr
∗2
∗2
Package Type TT8M2 Code Basic ordering unit (pieces)
Taping TR 3000
∗1 ∗1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
(1) ∗1 ESD protection diode ∗2 Body diode
(2)
(3)
(4) z Absolute maximum ratings (Ta=25°C) <Tr1 : Nch>
Parameter Drain- source voltage Gate- source voltage Drain current Source current (Body diode)
∗1 Pw≤10µs, Duty cycle≤1%
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP
∗1 ∗1
Limits 30 ±12 ±2.5 ±10 0.8 10
Unit V V A A A A
.rohm. c 2009 ROHM Co., Ltd. All...
