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1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol :M01
Application Switching
Packaging specifications Type TT8M1 Package Taping Code TR Basic ordering unit (pieces) 3000
Inner circuit
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Symbol VDSS VGSS
Limits Tr1 : N-ch Tr2 : P-ch
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