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Rohm Semiconductor Electronic Components Datasheet

SH8M4 Datasheet

Nch+Pch MOSFET

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4V Drive Nch+Pch MOSFET
SH8M4
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8M4
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10μs, Duty cycle1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
Nchannel Pchannel
30 30
±20 ±20
±9.0 ±7.0
±36 ±28
1.6 1.6
36 28
2
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Inner circuit
(8) (7) (6)
(5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.12 - Rev.A
Free Datasheet http://www.datasheet4u.com/


Rohm Semiconductor Electronic Components Datasheet

SH8M4 Datasheet

Nch+Pch MOSFET

No Preview Available !

SH8M4
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS
(on)
12 18
ID=9.0A, VGS=10V
16 24 mΩ ID=9.0A, VGS=4.5V
17 25
ID=9.0A, VGS=4V
Forward transfer admittance
Yfs 7.0
S ID=9.0A, VDS=10V
Input capacitance
Ciss
1190
pF VDS=10V
Output capacitance
Coss 340 pF VGS=0V
Reverse transfer capacitance Crss
190
Turn-on delay time
td (on) 10
Rise time
tr 15
Turn-off delay time
td (off) 55
Fall time
tf 22
Total gate charge
Qg 15
Gate-source charge
Qgs 3.0
Gate-drain charge
Qgd 6.1
Pulsed
pF f=1MHz
ns ID=4.5A, VDD 15V
ns VGS=10V
ns RL=3.33Ω
ns RG=10Ω
nC VDD 15V
nC VGS=5V
nC ID=9.0A
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Conditions
IS=6.4A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.12 - Rev.A


Part Number SH8M4
Description Nch+Pch MOSFET
Maker Rohm
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SH8M4 Datasheet PDF






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