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Rohm Semiconductor Electronic Components Datasheet

SH8M11 Datasheet

Nch+Pch MOSFET

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Data Sheet
4V Drive Nch + Pch MOSFET
SH8M11
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
Dimensions (Unit : mm)
SOP8
(8) (5)
(1) (4)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SH8M11
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
*2
PD
Tch
Tstg
30 30
20 20
3.5
3.5
14 12
1.6 1.6
14 12
2.0
1.4
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
2 2
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.10 - Rev.A
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Rohm Semiconductor Electronic Components Datasheet

SH8M11 Datasheet

Nch+Pch MOSFET

No Preview Available !

SH8M11
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Min.
-
30
-
1.0
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l *
Ciss
Coss
Crss
td(on) *
tr *
td(off) *
tf *
Qg *
Qgs *
Qgd *
1.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
70
90
100
-
85
40
20
4
8
18
3
1.9
0.8
0.4
Max.
10
-
1
2.5
98
126
140
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=3.5A, VGS=10V
mID=3.5A, VGS=4.5V
ID=3.5A, VGS=4V
S VDS=10V, ID=3.5A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1.7A, VDD 15V
ns VGS=10V
ns RL=8.8
ns RG=10
nC ID=3.5A, VDD 15V
nC VGS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
1.2
Unit Conditions
V Is=3.5A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/10
2011.10 - Rev.A


Part Number SH8M11
Description Nch+Pch MOSFET
Maker Rohm
PDF Download

SH8M11 Datasheet PDF






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