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Rohm Semiconductor Electronic Components Datasheet

SH8K41 Datasheet

80V Nch+Nch Middle MOSFET

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SH8K41
  80V Nch+Nch Middle MOSFET
VDSS
RDS(on)(Max.)
ID
PD
80V
130mΩ
±3.4A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package .
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
SOP8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
SH8K41
lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
total
element
VDSS
ID*1
ID,
*2
pulse
VGSS
EAS*3
IAS*3
PD*4
PD*4
Tj
Tstg
80
±3.4
±13.6
±20
8.4
3.4
2.0
1.4
150
-55 to +150
V
A
A
V
mJ
A
W
                                              
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140804 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

SH8K41 Datasheet

80V Nch+Nch Middle MOSFET

No Preview Available !

SH8K41
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                       
Symbol
RthJA*4
Values
Min. Typ. Max.
- 62.5 -
Unit
/W
lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
   
Unit
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
80 - - V
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Transconductance
 ΔV(BR)DSS ID = 1mA
   ΔTj    referenced to 25
IDSS VDS = 80V, VGS = 0V
IGSS VDS = 0V, VGS = ±20V
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)  ID = 1mA
   ΔTj    referenced to 25
VGS = 10V, ID = 3.4A
RDS(on) VGS = 4.5V, ID = 3.4A
VGS = 4.0V, ID = 3.4A
gfs*5 VDS = 10V, ID = 3.4A
- 81.3 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -4.4 - mV/
- 90 130
- 110 150 mΩ
- 120 160
3.0 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 1mH, VDD = 40V, RG = 25Ω, STARTING Tch = 25Fig.3-1,3-2
*4 Mounted on a ceramic board.
*5 Pulsed
                                                                                               
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
20140804 - Rev.001


Part Number SH8K41
Description 80V Nch+Nch Middle MOSFET
Maker Rohm
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SH8K41 Datasheet PDF






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