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SCS212AJ
SiC Schottky Barrier Diode
VR 650V IF 12A QC 18nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
lOutline
LPT(L)
Data Sheet
(1)
(2) (3) (4)
lInner circuit
(1)
(1) Cathode (2) N / C (3) Cathode (4) Anode
(2) (3) (4)
lPackaging specifications Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm) Type
Basic ordering unit (pcs)
24 1,000
Taping code
TLL
Marking
SCS212AJ
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM 650 V
Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VR 650 V
IF
12*1
A
45*2
SCS212AJ Datasheet
